? 2008 ixys corporation, all rights reserved genx3 tm 1000v igbt symbol test conditions maximum ratings v ces t c = 25c to 150c 1000 v v cgr t j = 25c to 150c, r ge = 1m 1000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c, igbt chip capability 75 a i c110 t c = 110c 32 a i cm t j 150c, tp < 300 s 200 a i as t c = 25 c 20 a e as t c = 25 c 120 mj ssoa v ge = 15v, t vj = 125c, r g = 10 i cm = 150 a (rbsoa) clamped inductive load @ 0.8 ? v ces p c t c = 25c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247 ) 1.13 / 10 nm/lb.in. weight to-247 6 g to-268 5 g ds99958(02/08) IXGH32N100A3 ixgt32n100a3 g = gate c = collector e = emitter tab = collector symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1000 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 50 a v ge = 0v t j = 125c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 32a, v ge = 15v, note 1 1.90 2.2 v t j = 125c 2.05 v v ces = 1000v i c25 = 75a v ce(sat) 2.2v ultra-low vsat pt igbts for up to 4 khz switching g c e to-247 (ixgh) c (tab) to-268 ( ixgt) g e c (tab) features ? international standard packages ? low saturation voltage ? avalanche rated ? mos gate turn-on - drive simplicity ? epoxy molding meets ul 94v-o applications ? pulser circuits ? capacitor discharge advance technical information
ixys reserves the right to change limits, test conditions and dimensions. IXGH32N100A3 ixgt32n100a3 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 32a, v ce = 10v, note 1 14 20 s c ies 2250 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 130 pf c res 48 pf q g(on) 87 nc q ge i c = 32a, v ge = 15v, v ce = 0.5 ? v ces 16 nc q gc 35 nc t d(on) 24 ns t ri 51 ns e on 2.6 mj t d(off) 385 700 ns t fi 540 800 ns e off 9.5 14 mj t d(on) 52 ns t ri 23 ns e on 4.2 mj t d(off) 400 ns t fi 770 ns e off 13 mj r thjc 0.42 c/w r thcs to-247 0.21 c/w note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline inductive load, t j = 25c i c = 32a, v ge = 15v v ce = 800v, r g = 10 inductive load, t j = 125c i c = 32a, v ge = 15v v ce = 800v, r g = 10 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-268 outline terminals: 1 - gate 2 - collector 3 - emitter
|
